BFU768F,115
NXP Semiconductors
NXP Semiconductors
BFU768F - NPN WIDEBAND SILICON G
$0.13
Available to order
Reference Price (USD)
3,000+
$0.15266
6,000+
$0.14281
15,000+
$0.13296
30,000+
$0.13132
Exquisite packaging
Discount
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Boost your RF circuitry with BFU768F,115, NXP Semiconductors's premium BJT transistors tailored for high-speed switching. Key advantages include minimal intermodulation distortion and extended operational life. Widely adopted in 5G infrastructure and aerospace tech. Have questions? Send your inquiry we re here to optimize your procurement process!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.8V
- Frequency - Transition: 110GHz
- Noise Figure (dB Typ @ f): 1.1dB ~ 1.2dB @ 5GHz ~ 5.9GHz
- Gain: 13.1dB
- Power - Max: 220mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: 4-DFP
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