UPA801T-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF 0.1A, 2-ELEMENT, S BAND, NPN
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
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Discover high-performance UPA801T-T1-A RF Bipolar Transistors from Renesas Electronics America Inc, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 4.5GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 9dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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