BSC034N03LSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 22A/100A TDSON
$0.61
Available to order
Reference Price (USD)
5,000+
$0.38696
10,000+
$0.37242
25,000+
$0.37030
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BSC034N03LSGATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
Related Products
Alpha & Omega Semiconductor Inc.
AON7264E
IXYS
IXFP18N65X2
Diodes Incorporated
DMP2069UFY4-7
Infineon Technologies
IPP50R500CEXKSA1
Diodes Incorporated
DMP2070U-7
Texas Instruments
CSD19537Q3T
Diodes Incorporated
ZXMN10A11GTA
Diodes Incorporated
DMP4011SK3-13
Nexperia USA Inc.
PSMN4R5-40PS,127
Taiwan Semiconductor Corporation