BSC057N03MSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 15A/71A TDSON
$1.05
Available to order
Reference Price (USD)
5,000+
$0.31749
10,000+
$0.30573
25,000+
$0.29932
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSC057N03MSGATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSC057N03MSGATMA1 inquire now for more details!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
Related Products
Nexperia USA Inc.
PSMN008-75B,118
Taiwan Semiconductor Corporation
TSM055N03PQ56 RLG
onsemi
FDA70N20
Fairchild Semiconductor
FQD60N03LTM
Vishay Siliconix
IRFR120TRRPBF
Infineon Technologies
BSC016N03MSGATMA1
onsemi
NTD85N02R-001
Infineon Technologies
BSS223PWH6327XTSA1
Vishay Siliconix
SISS27ADN-T1-GE3
onsemi