BSC070N10NS5SCATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 14A/82A 8SWSON
$3.22
Available to order
Reference Price (USD)
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$3.22000
500+
$3.1878
1000+
$3.1556
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$3.1234
2000+
$3.0912
2500+
$3.059
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSC070N10NS5SCATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSC070N10NS5SCATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-WSON-8-2
- Package / Case: 8-PowerWDFN
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