BSD316SNH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 1.4A SOT363-6
$0.52
Available to order
Reference Price (USD)
9,000+
$0.08883
Exquisite packaging
Discount
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BSD316SNH6327XTSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSD316SNH6327XTSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-PO
- Package / Case: 6-VSSOP, SC-88, SOT-363
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