PMV37EN,215
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 3.1A TO236AB
$0.16
Available to order
Reference Price (USD)
1+
$0.16000
500+
$0.1584
1000+
$0.1568
1500+
$0.1552
2000+
$0.1536
2500+
$0.152
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover PMV37EN,215, a versatile Transistors - FETs, MOSFETs - Single solution from NXP USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 380mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236AB)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Microchip Technology
APT5024BFLLG
Fairchild Semiconductor
FQB46N15TM
Texas Instruments
CSD19536KCS
Vishay Siliconix
SIHA180N60E-GE3
onsemi
CPH3427-TL-E
Diodes Incorporated
DMN65D8LQ-13
STMicroelectronics
STF25N60M2-EP
onsemi
FCPF190N65S3L1
Infineon Technologies
SPB11N60C2
onsemi