FQB46N15TM
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$1.41
Available to order
Reference Price (USD)
1+
$1.41000
500+
$1.3959
1000+
$1.3818
1500+
$1.3677
2000+
$1.3536
2500+
$1.3395
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with FQB46N15TM by Fairchild Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, FQB46N15TM ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 210W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Texas Instruments
CSD19536KCS
Vishay Siliconix
SIHA180N60E-GE3
onsemi
CPH3427-TL-E
Diodes Incorporated
DMN65D8LQ-13
STMicroelectronics
STF25N60M2-EP
onsemi
FCPF190N65S3L1
Infineon Technologies
SPB11N60C2
onsemi
NDB6060L
Nexperia USA Inc.
PMV90ENER
Infineon Technologies