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BSM120C12P2C201

Rohm Semiconductor
BSM120C12P2C201 Preview
Rohm Semiconductor
1200V, 134A, CHOPPER, SILICON-CA
$428.40
Available to order
Reference Price (USD)
1+
$428.40000
500+
$424.116
1000+
$419.832
1500+
$415.548
2000+
$411.264
2500+
$406.98
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4V @ 22mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
  • Power - Max: 935W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module

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