BSM300D12P2E001
Rohm Semiconductor
Rohm Semiconductor
MOSFET 2N-CH 1200V 300A
$852.54
Available to order
Reference Price (USD)
1+
$663.08000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSM300D12P2E001 from Rohm Semiconductor is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, BSM300D12P2E001 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Rohm Semiconductor s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 68mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V
- Power - Max: 1875W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Vishay Siliconix
SI7942DP-T1-GE3
Diodes Incorporated
DMTH4007SPD-13
Fairchild Semiconductor
IRFN214BTA
Toshiba Semiconductor and Storage
SSM6N17FU(TE85L,F)
Vishay Siliconix
SQJB40EP-T1_GE3
onsemi
NTMFD4902NFT1G
Taiwan Semiconductor Corporation
TSM250NB06LDCR RLG
Fairchild Semiconductor
FDMC3300NZA
Diodes Incorporated
ZXMC10A816N8TC
Fairchild Semiconductor