BSP129H6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 240V 350MA SOT223-4
$0.99
Available to order
Reference Price (USD)
1,000+
$0.38181
2,000+
$0.34950
5,000+
$0.32797
10,000+
$0.31720
25,000+
$0.31132
Exquisite packaging
Discount
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Upgrade your electronic designs with BSP129H6327XTSA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BSP129H6327XTSA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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