BUK753R1-40B,127
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 40V 75A TO220AB
$1.14
Available to order
Reference Price (USD)
1+
$1.14000
500+
$1.1286
1000+
$1.1172
1500+
$1.1058
2000+
$1.0944
2500+
$1.083
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BUK753R1-40B,127 by NXP USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BUK753R1-40B,127 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Microchip Technology
APT10M19SVFRG
Harris Corporation
IRF520
Infineon Technologies
IAUA250N04S6N006AUMA1
Vishay Siliconix
SQP60N06-15_GE3
Rohm Semiconductor
QS5U36TR
Vishay Siliconix
IRFR310TRPBF-BE3
onsemi
FQPF10N20C
Transphorm
TP65H480G4JSG-TR
onsemi
NTD3813N-1G
IXYS