CSD17313Q2Q1
Texas Instruments
Texas Instruments
MOSFET N-CH 30V 5A 6WSON
$0.84
Available to order
Reference Price (USD)
1+
$0.84000
500+
$0.8316
1000+
$0.8232
1500+
$0.8148
2000+
$0.8064
2500+
$0.798
Exquisite packaging
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Boost your electronic applications with CSD17313Q2Q1, a reliable Transistors - FETs, MOSFETs - Single by Texas Instruments. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, CSD17313Q2Q1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
- Vgs (Max): +10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WSON (2x2)
- Package / Case: 6-WDFN Exposed Pad
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