DCX114EU-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP PREBIAS SOT363
$0.30
Available to order
Reference Price (USD)
3,000+
$0.08280
6,000+
$0.07524
15,000+
$0.06768
30,000+
$0.06390
75,000+
$0.05760
Exquisite packaging
Discount
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Maximize circuit reliability with Diodes Incorporated's DCX114EU-7-F Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. Diodes Incorporated maintains strict quality control measures for all discrete semiconductor products. Interested in DCX114EU-7-F specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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