NSBC123JPDXV6T1G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT563
$0.38
Available to order
Reference Price (USD)
4,000+
$0.10935
8,000+
$0.10305
12,000+
$0.09675
28,000+
$0.08940
Exquisite packaging
Discount
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onsemi's NSBC123JPDXV6T1G represents the next generation of Pre-Biased Bipolar Transistor Arrays, combining efficiency with compact design. These surface-mount compatible components feature integrated bias networks that reduce part count while improving system reliability. Ideal applications encompass power management, sensor interfaces, and digital circuit amplification in medical equipment, robotics, and smart home systems. Notable advantages include consistent hFE matching, reduced board space requirements, and simplified inventory management. As a leading supplier of discrete semiconductors, onsemi guarantees quality and performance. Get competitive quotes and lead times inquire about NSBC123JPDXV6T1G now!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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