RN4902,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
$0.29
Available to order
Reference Price (USD)
3,000+
$0.06510
6,000+
$0.05859
15,000+
$0.05208
30,000+
$0.04883
75,000+
$0.04340
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade to Toshiba Semiconductor and Storage's premium RN4902,LF(CT BJT Arrays for unmatched performance in discrete semiconductor applications. These pre-biased transistor pairs deliver consistent results in amplification and switching tasks, featuring optimized base-emitter resistors for immediate circuit integration. Perfect for use in voltage regulators, relay drivers, and signal conditioning circuits within consumer electronics and embedded systems. The product line boasts high power dissipation, wide operating temperature ranges, and moisture-resistant packaging. As an industry leader, Toshiba Semiconductor and Storage provides technical documentation and design support for all RN4902,LF(CT applications. Start your order process submit an inquiry to receive customized solutions!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Related Products
Toshiba Semiconductor and Storage
RN4901FE,LXHF(CT
Toshiba Semiconductor and Storage
RN1907,LF(CT
Nexperia USA Inc.
PEMD9,315
Rohm Semiconductor
EMG9T2R
Toshiba Semiconductor and Storage
RN4984FE,LF(CT
Nexperia USA Inc.
PUMH7,115
onsemi
EMF18XV6T5G
onsemi
MUN5215DW1T1G
Rohm Semiconductor
EMD30T2R
NXP USA Inc.