DF100R07W1H5FPB54BPSA2
Infineon Technologies
Infineon Technologies
IGBT MOD 650V 40A 20MW
$64.00
Available to order
Reference Price (USD)
30+
$47.61600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's DF100R07W1H5FPB54BPSA2 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
- Current - Collector Cutoff (Max): 40 µA
- Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
IFS100B12N3E4B31BOSA1
Infineon Technologies
FZ1200R45KL3B5NOSA1
Infineon Technologies
FS50R12KE3BOSA1
Infineon Technologies
FF600R07ME4B11BPSA1
IXYS
IXYN140N120A4
Infineon Technologies
FS150R12PT4BOSA1
Infineon Technologies
FD200R12KE3HOSA1
Vishay General Semiconductor - Diodes Division
VS-GT90DA120U
Infineon Technologies
DF300R12KE3HOSA1
Infineon Technologies