FD200R12KE3HOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 1050W
$148.72
Available to order
Reference Price (USD)
10+
$94.13800
Exquisite packaging
Discount
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Boost your project's performance with the FD200R12KE3HOSA1 IGBT Module by Infineon Technologies. Designed for harsh environments, it provides unmatched efficiency in railway systems, wind turbines, and more. Features like overcurrent protection ensure safety. Let Infineon Technologies power your innovations send your inquiry now!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Power - Max: 1050 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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