DF80R12W2H3FB11BPSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 20A 20MW
$92.32
Available to order
Reference Price (USD)
15+
$73.37933
Exquisite packaging
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Infineon Technologies's DF80R12W2H3FB11BPSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 20 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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