DMC3060LVTQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V TSOT26 T&R
$0.17
Available to order
Reference Price (USD)
1+
$0.16726
500+
$0.1655874
1000+
$0.1639148
1500+
$0.1622422
2000+
$0.1605696
2500+
$0.158897
Exquisite packaging
Discount
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Optimize your electronic circuits with Diodes Incorporated s DMC3060LVTQ-7, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMC3060LVTQ-7 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
- Power - Max: 830mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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