DMG4511SK4-13
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 35V TO252-4L
$0.84
Available to order
Reference Price (USD)
2,500+
$0.34823
5,000+
$0.32689
12,500+
$0.31622
25,000+
$0.31040
Exquisite packaging
Discount
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Enhance your electronic applications with Diodes Incorporated s DMG4511SK4-13, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of DMG4511SK4-13 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 35V
- Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
- Power - Max: 1.54W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252-4L
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