SH8MA2GZETB
Rohm Semiconductor
Rohm Semiconductor
SH8MA2 IS A POWER MOSFET WITH LO
$0.78
Available to order
Reference Price (USD)
1+
$0.78000
500+
$0.7722
1000+
$0.7644
1500+
$0.7566
2000+
$0.7488
2500+
$0.741
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with Rohm Semiconductor s SH8MA2GZETB, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for SH8MA2GZETB.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 15V, 305pF @ 15V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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