DMG4800LK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 10A TO252-3
$0.63
Available to order
Reference Price (USD)
2,500+
$0.23812
5,000+
$0.22438
12,500+
$0.21062
25,000+
$0.20100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMG4800LK3-13, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMG4800LK3-13 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.71W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Diodes Incorporated
DMP65H13D0HSS-13
Fairchild Semiconductor
FDZ193P
Diodes Incorporated
DMP1009UFDF-7
onsemi
FDBL0330N80
IXYS
IXFH60N50P3
IXYS
IXTT3N200P3HV
onsemi
FQD6N40CTM
Rohm Semiconductor
RSR025N03HZGTL
Vishay Siliconix
SI3437DV-T1-BE3
Toshiba Semiconductor and Storage