DMN2016UTS-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 8.58A 8-TSSOP
$0.66
Available to order
Reference Price (USD)
2,500+
$0.24765
5,000+
$0.23335
12,500+
$0.21905
25,000+
$0.20904
Exquisite packaging
Discount
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The DMN2016UTS-13 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMN2016UTS-13 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8.58A
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V
- Power - Max: 880mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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