DMN2250UFB-7B
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 1.35A 3DFN
$0.07
Available to order
Reference Price (USD)
10,000+
$0.07350
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMN2250UFB-7B by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMN2250UFB-7B ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
Related Products
onsemi
FDS86140
onsemi
NTMFS4708NT1G
Alpha & Omega Semiconductor Inc.
AOTF2610L
Vishay Siliconix
SI4431CDY-T1-GE3
Vishay Siliconix
SI4840BDY-T1-GE3
Nexperia USA Inc.
BUK661R9-40C,118
Toshiba Semiconductor and Storage
TPN30008NH,LQ
Infineon Technologies
IRF7862TRPBF
IXYS
IXTT240N15X4HV
Infineon Technologies