DMN26D0UDJ-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 0.24A SOT963
$0.37
Available to order
Reference Price (USD)
10,000+
$0.10770
30,000+
$0.09978
50,000+
$0.09648
100,000+
$0.09600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN26D0UDJ-7 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMN26D0UDJ-7 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 240mA
- Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 14.1pF @ 15V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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