DMN3015LSD-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 8.4A 8SO
$0.71
Available to order
Reference Price (USD)
2,500+
$0.26670
5,000+
$0.25130
12,500+
$0.23590
25,000+
$0.22512
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance DMN3015LSD-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Diodes Incorporated s DMN3015LSD-13 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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