DMN53D0L-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
$0.05
Available to order
Reference Price (USD)
10,000+
$0.05465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with DMN53D0L-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMN53D0L-13 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
IXYS
IXFX27N80Q
onsemi
FDMS86183
Vishay Siliconix
SIHG11N80AE-GE3
Infineon Technologies
IRFZ44VPBF
STMicroelectronics
STL10N65M2
Alpha & Omega Semiconductor Inc.
AOI538
NXP USA Inc.
BUK7507-55B,127
Vishay Siliconix
SI2323CDS-T1-BE3
onsemi
NVTYS004N03CLTWG
Toshiba Semiconductor and Storage