DMN61D9UT-7
Diodes Incorporated
Diodes Incorporated
2N7002 FAMILY SOT523 T&R 3K
$0.07
Available to order
Reference Price (USD)
1+
$0.06527
500+
$0.0646173
1000+
$0.0639646
1500+
$0.0633119
2000+
$0.0626592
2500+
$0.0620065
Exquisite packaging
Discount
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Boost your electronic applications with DMN61D9UT-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN61D9UT-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 260mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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