DMN61D9UWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 400MA SOT323
$0.38
Available to order
Reference Price (USD)
10,000+
$0.06037
30,000+
$0.05698
50,000+
$0.05122
100,000+
$0.05020
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of DMN61D9UWQ-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMN61D9UWQ-13 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 440mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
Diodes Incorporated
DMN61D9UT-7
Microchip Technology
VN2406L-G
Renesas Electronics America Inc
RJK2017DPP-B1#T2F
Vishay Siliconix
IRFU9014PBF
onsemi
FCA76N60N
Vishay Siliconix
SIR164DP-T1-GE3
Fairchild Semiconductor
FQAF19N20L
Infineon Technologies
IPZA60R080P7XKSA1
IXYS
IXTT96N20P
onsemi