DMN63D8LDW-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 0.22A SOT363
$0.04
Available to order
Reference Price (USD)
1+
$0.04413
500+
$0.0436887
1000+
$0.0432474
1500+
$0.0428061
2000+
$0.0423648
2500+
$0.0419235
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic circuits with Diodes Incorporated s DMN63D8LDW-13, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMN63D8LDW-13 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 220mA
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
onsemi
NDS9945
Alpha & Omega Semiconductor Inc.
AONY36354
Diodes Incorporated
DMN2053UVT-13
Taiwan Semiconductor Corporation
TSM110NB04LDCR RLG
Fairchild Semiconductor
SSD2007ATF
Diodes Incorporated
DMG6302UDW-13
Diodes Incorporated
DMN1029UFDB-13
Diodes Incorporated
ZXMN2A04DN8TA
Diodes Incorporated
DMN2053UVT-7
Nexperia USA Inc.