DMN63D8LDWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 0.22A SOT363
$0.42
Available to order
Reference Price (USD)
3,000+
$0.07644
6,000+
$0.06720
15,000+
$0.05796
30,000+
$0.05488
75,000+
$0.05180
150,000+
$0.04564
Exquisite packaging
Discount
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The DMN63D8LDWQ-7 by Diodes Incorporated is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate DMN63D8LDWQ-7 into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 220mA
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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