DMP65H9D0HSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 501V~650V SO-8 T&R
$0.63
Available to order
Reference Price (USD)
1+
$0.62925
500+
$0.6229575
1000+
$0.616665
1500+
$0.6103725
2000+
$0.60408
2500+
$0.5977875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance DMP65H9D0HSS-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMP65H9D0HSS-13 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SIHP11N80E-GE3
onsemi
NTTFS008N04CTAG
EPC
EPC2010C
IXYS
IXTA1N120P
IXYS
IXFA6N120P
onsemi
NTTFS4928NTWG
onsemi
2SK4099LS
Vishay Siliconix
SISA04DN-T1-GE3
STMicroelectronics
STD64N4F6AG
Taiwan Semiconductor Corporation