DTC123JM3T5G
onsemi
onsemi
TRANS PREBIAS NPN 50V SOT723
$0.33
Available to order
Reference Price (USD)
8,000+
$0.04818
16,000+
$0.04125
24,000+
$0.03894
56,000+
$0.03663
200,000+
$0.03278
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your projects with the DTC123JM3T5G by onsemi, a top-tier choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer outstanding durability and precision, ensuring optimal performance in any circuit. Key features include high current gain, low saturation voltage, and thermal stability. Ideal for use in power management, signal processing, and automation systems. onsemi guarantees top-notch quality and performance. Reach out now to learn more or request a sample!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 260 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SOT-723
Related Products
Toshiba Semiconductor and Storage
RN1310(TE85L,F)
Rohm Semiconductor
DTC115EUAT106
Rohm Semiconductor
DTA115EMFHAT2L
Nexperia USA Inc.
NHDTA124ETR
Nexperia USA Inc.
PDTA143ZMB,315
NXP USA Inc.
PDTC144EE,115
Toshiba Semiconductor and Storage
RN1101,LXHF(CT
onsemi
SMUN2114T1G
onsemi
NSVMUN2236T1G
Toshiba Semiconductor and Storage