RN1101,LXHF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q SINGLE NPN Q1BSR=4.7K
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN1101,LXHF(CT by Toshiba Semiconductor and Storage is a high-performance solution in the Discrete Semiconductor Products sector. These Transistors - Bipolar (BJT) - Single, Pre-Biased are crafted for excellence, featuring high efficiency, low thermal resistance, and long lifespan. Perfect for use in power converters, lighting systems, and communication devices. Toshiba Semiconductor and Storage guarantees superior products and support. Get in touch today to explore our offerings!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
Related Products
onsemi
SMUN2114T1G
onsemi
NSVMUN2236T1G
Toshiba Semiconductor and Storage
RN1317(TE85L,F)
Nexperia USA Inc.
PDTA143ZQC-QZ
Infineon Technologies
BCR119WH6327
Rohm Semiconductor
DTA113ZUAT106
Diodes Incorporated
DDTA124XCA-7-F
Toshiba Semiconductor and Storage
RN2304,LXHF
Toshiba Semiconductor and Storage
RN1102,LXHF(CT
Diodes Incorporated