EMF18XV6T5G
onsemi
onsemi
TRANS PREBIAS NPN/PNP SOT563
$0.15
Available to order
Reference Price (USD)
8,000+
$0.13929
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi's EMF18XV6T5G represents the next generation of Pre-Biased Bipolar Transistor Arrays, combining efficiency with compact design. These surface-mount compatible components feature integrated bias networks that reduce part count while improving system reliability. Ideal applications encompass power management, sensor interfaces, and digital circuit amplification in medical equipment, robotics, and smart home systems. Notable advantages include consistent hFE matching, reduced board space requirements, and simplified inventory management. As a leading supplier of discrete semiconductors, onsemi guarantees quality and performance. Get competitive quotes and lead times inquire about EMF18XV6T5G now!
Specifications
- Product Status: Last Time Buy
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 60V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 1mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 140MHz
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
onsemi
MUN5215DW1T1G
Rohm Semiconductor
EMD30T2R
NXP USA Inc.
PBLS2001S,115
onsemi
NSVMUN531335DW1T1G
Toshiba Semiconductor and Storage
RN1911FE,LF(CT
Nexperia USA Inc.
NHUMH2X
Nexperia USA Inc.
PEMH19,115
Nexperia USA Inc.
PEMH13,115
Infineon Technologies
BCR141SH6327XTSA1
Diodes Incorporated