EMH10T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS 2NPN PREBIAS 0.15W EMT6
$0.41
Available to order
Reference Price (USD)
8,000+
$0.09690
16,000+
$0.08835
24,000+
$0.08265
56,000+
$0.07980
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic designs with Rohm Semiconductor's EMH10T2R BJT Array solution, offering pre-configured biasing for immediate implementation. These transistor arrays excel in switching and linear applications where space and efficiency are critical. The product series demonstrates superior characteristics: thermal shutdown protection, high-frequency response, and ESD protection for durable performance. Commonly deployed in battery-powered devices, motor controllers, and audio amplifiers across multiple industries. Rohm Semiconductor combines decades of semiconductor experience with cutting-edge manufacturing techniques. Don't compromise on quality request samples or volume pricing for EMH10T2R through our quick inquiry system!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
Related Products
onsemi
NSBC143TPDXV6T1G
Toshiba Semiconductor and Storage
RN1706,LF
Nexperia USA Inc.
PEMB9,115
Diodes Incorporated
ADC114YUQ-7
onsemi
MUN5236DW1T1
Diodes Incorporated
DCX124EU-7-F
onsemi
NSB4904DW1T1G
Toshiba Semiconductor and Storage
RN2961(TE85L,F)
Toshiba Semiconductor and Storage
RN1608(TE85L,F)
onsemi