NSVMUN5211DW1T3G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SC88
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic designs with onsemi's NSVMUN5211DW1T3G BJT Array solution, offering pre-configured biasing for immediate implementation. These transistor arrays excel in switching and linear applications where space and efficiency are critical. The product series demonstrates superior characteristics: thermal shutdown protection, high-frequency response, and ESD protection for durable performance. Commonly deployed in battery-powered devices, motor controllers, and audio amplifiers across multiple industries. onsemi combines decades of semiconductor experience with cutting-edge manufacturing techniques. Don't compromise on quality request samples or volume pricing for NSVMUN5211DW1T3G through our quick inquiry system!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
Diodes Incorporated
DCX123JH-7
Diodes Incorporated
DDA114EUQ-7-F
Infineon Technologies
BCR119SH6433XTMA1
Nexperia USA Inc.
NHUMD13X
Toshiba Semiconductor and Storage
RN1903FE,LXHF(CT
Nexperia USA Inc.
PBLS2003D,115
Nexperia USA Inc.
PBLS2021D,115
Rohm Semiconductor
EMB51T2R
Panasonic Electronic Components
UP0339000L
Nexperia USA Inc.