EPC2053
EPC
EPC
GANFET N-CH 100V 48A DIE
$4.75
Available to order
Reference Price (USD)
1+
$4.75000
500+
$4.7025
1000+
$4.655
1500+
$4.6075
2000+
$4.56
2500+
$4.5125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with EPC2053, a reliable Transistors - FETs, MOSFETs - Single by EPC. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, EPC2053 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
Toshiba Semiconductor and Storage
TK33S10N1L,LXHQ
Vishay Siliconix
SQJ443EP-T2_GE3
Alpha & Omega Semiconductor Inc.
AOC2421
Infineon Technologies
BSZ018N04LS6ATMA1
STMicroelectronics
STW74NF30
Alpha & Omega Semiconductor Inc.
AOI950A70
Infineon Technologies
IRFU5305PBF
Infineon Technologies
IPW65R110CFDFKSA1
Infineon Technologies
IPA65R099C6XKSA1
Vishay Siliconix