EPC2105
EPC
EPC
GAN TRANS ASYMMETRICAL HALF BRID
$9.16
Available to order
Reference Price (USD)
500+
$4.85150
1,000+
$4.38200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance EPC2105 from EPC, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let EPC s EPC2105 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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