EPC2106ENGRT
EPC
EPC
GAN TRANS 2N-CH 100V BUMPED DIE
$0.00
Available to order
Reference Price (USD)
2,500+
$0.78400
Exquisite packaging
Discount
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The EPC2106ENGRT by EPC is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let EPC s EPC2106ENGRT be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A
- Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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