EPC2215
EPC
EPC
GAN TRANS 200V 8MOHM BUMPED DIE
$6.44
Available to order
Reference Price (USD)
1+
$6.44000
500+
$6.3756
1000+
$6.3112
1500+
$6.2468
2000+
$6.1824
2500+
$6.118
Exquisite packaging
Discount
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Experience the power of EPC2215, a premium Transistors - FETs, MOSFETs - Single from EPC. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, EPC2215 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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