FCD620N60ZF
onsemi
onsemi
MOSFET N-CH 600V 7.3A DPAK
$2.13
Available to order
Reference Price (USD)
2,500+
$0.61044
5,000+
$0.58160
12,500+
$0.56100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FCD620N60ZF, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FCD620N60ZF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
IRFR9210TRPBF
Panjit International Inc.
PJL9480_R2_00001
Infineon Technologies
IRF7831TRPBF
Nexperia USA Inc.
PMV15ENER
Vishay Siliconix
SIRA00DP-T1-GE3
IXYS
IXFK230N20T
Infineon Technologies
IRFZ48NPBF
onsemi
RFD3055LE
Diodes Incorporated
DMNH10H028SCT
Vishay Siliconix