FDB3682
onsemi
onsemi
MOSFET N-CH 100V 6A/32A TO263
$2.48
Available to order
Reference Price (USD)
800+
$0.97433
1,600+
$0.89811
2,400+
$0.83948
5,600+
$0.81016
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDB3682 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDB3682 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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