Shopping cart

Subtotal: $0.00

FDD8451

Fairchild Semiconductor
FDD8451 Preview
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 9
$0.49
Available to order
Reference Price (USD)
2,500+
$0.40733
5,000+
$0.38696
12,500+
$0.37242
25,000+
$0.37030
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Vishay Siliconix

SIR164ADP-T1-GE3

Infineon Technologies

BSC070N10LS5ATMA1

Alpha & Omega Semiconductor Inc.

AON2403

Microchip Technology

APT56M50L

Infineon Technologies

IPI65R280C6

Panjit International Inc.

PJD25N06A-AU_L2_000A1

STMicroelectronics

STW42N60M2-EP

Top