FDG361N
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 100V 600MA SC88
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FDG361N, a reliable Transistors - FETs, MOSFETs - Single by Fairchild Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FDG361N meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 600mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 420mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88 (SC-70-6)
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Infineon Technologies
SPA07N60C2
Infineon Technologies
IPB65R045C7ATMA2
Vishay Siliconix
SQ4050EY-T1_GE3
IXYS
IXTK180N15P
Infineon Technologies
IAUC41N06S5L100ATMA1
Diodes Incorporated
BSS138TA
onsemi
FDC642P
Infineon Technologies
IPD90N03S4L03ATMA1
Fairchild Semiconductor
ISL9N322AP3
Fairchild Semiconductor