FDMD8900
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, N
$0.91
Available to order
Reference Price (USD)
3,000+
$0.96852
Exquisite packaging
Discount
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Boost your project s performance with Fairchild Semiconductor s FDMD8900, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, FDMD8900 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of FDMD8900.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 19A, 17A
- Rds On (Max) @ Id, Vgs: 4mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-PowerWDFN
- Supplier Device Package: 12-Power3.3x5
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