FDPF39N20
onsemi
onsemi
MOSFET N-CH 200V 39A TO220F
$2.16
Available to order
Reference Price (USD)
1+
$2.17000
10+
$1.96200
100+
$1.57680
500+
$1.22642
1,000+
$1.01617
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FDPF39N20, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FDPF39N20 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
Related Products
Panjit International Inc.
PJP10NA60_T0_00001
Infineon Technologies
SPS03N60C3AKMA1
Diodes Incorporated
DMP32D9UFO-7B
IXYS
IXTA4N80P
Infineon Technologies
IPB180N10S402ATMA1
STMicroelectronics
STL3N10F7
Taiwan Semiconductor Corporation
TSM130NB06CR RLG
Infineon Technologies
SPW55N80C3FKSA1
Vishay Siliconix
SQJ411EP-T1_GE3
Nexperia USA Inc.