TSM130NB06CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 10A/51A 8PDFN
$0.98
Available to order
Reference Price (USD)
2,500+
$0.34930
5,000+
$0.33726
Exquisite packaging
Discount
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Optimize your electronic systems with TSM130NB06CR RLG, a high-quality Transistors - FETs, MOSFETs - Single from Taiwan Semiconductor Corporation. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TSM130NB06CR RLG provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
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