FDZ3N513ZT
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET P-CH 30V 1.1A 4WLCSP
$0.32
Available to order
Reference Price (USD)
1+
$0.32000
500+
$0.3168
1000+
$0.3136
1500+
$0.3104
2000+
$0.3072
2500+
$0.304
Exquisite packaging
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FDZ3N513ZT by Fairchild Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FDZ3N513ZT ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 462mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
- Vgs (Max): +5.5V, -300mV
- Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 15 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-WLCSP (1x1)
- Package / Case: 4-XFBGA, WLCSP
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